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CH08T0934 Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
CH08T0934TOS100Yes

Part Number:** CH08T0934 **Manufacturer:** TOS (Toshiba) ### **Specifications:** - **Type:** High-voltage switching transistor - **Material:** Silicon NPN - **Collector-Emitter Voltage (VCEO):** 800V - **Collector-Base Voltage (VCBO):** 900

Part Number: CH08T0934

Manufacturer: TOS (Toshiba)

Specifications:

  • Type: High-voltage switching transistor
  • Material: Silicon NPN
  • Collector-Emitter Voltage (VCEO): 800V
  • Collector-Base Voltage (VCBO): 900V
  • Emitter-Base Voltage (VEBO): 7V
  • Collector Current (IC): 8A
  • Power Dissipation (PC): 80W
  • DC Current Gain (hFE): 20 (min) at IC = 4A, VCE = 5V
  • Transition Frequency (fT): 3MHz (typical)
  • Operating Temperature Range: -55°C to +150°C
  • Package: TO-3P

Descriptions:

The CH08T0934 is a high-voltage NPN transistor designed for switching applications in power supplies, inverters, and other high-voltage circuits. It features a rugged construction suitable for industrial and automotive applications.

Features:

  • High breakdown voltage (800V VCEO)
  • Low saturation voltage for efficient switching
  • High current capability (8A)
  • Robust TO-3P package for thermal dissipation
  • Suitable for high-power switching and amplification

This transistor is commonly used in power regulation, motor control, and electronic ballasts.

(Note: Always refer to the official datasheet for precise specifications before use.)

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