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TB1021P Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumber	Manufactor	Quantity	Availability
TB1021P	TOS	100	Yes

TB1021P is a power transistor manufactured by TOS (Toshiba)**.

The TB1021P is a power transistor manufactured by TOS (Toshiba). Below are the factual specifications, descriptions, and features:

Specifications:

Type: PNP Silicon Epitaxial Planar Transistor
Collector-Base Voltage (VCBO): -50V
Collector-Emitter Voltage (VCEO): -50V
Emitter-Base Voltage (VEBO): -5V
Collector Current (IC): -3A
Total Power Dissipation (PT): 25W
Junction Temperature (Tj): 150°C
Storage Temperature (Tstg): -55°C to +150°C

Descriptions:

Designed for general-purpose amplification and switching applications.
Suitable for low-frequency power amplification and driver stages.
Encased in a TO-220 package for efficient heat dissipation.

Features:

High current capability (up to 3A).
Low saturation voltage for improved efficiency.
High reliability with robust construction.
Epitaxial planar structure for stable performance.

For exact application details, refer to the official Toshiba datasheet.

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