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TD2005P Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
TD2005PTOS308Yes

TD2005P** is a power transistor manufactured by **TOS (Toshiba)**.

The TD2005P is a power transistor manufactured by TOS (Toshiba). Below are its specifications, descriptions, and features:

Specifications:

  • Type: NPN Silicon Epitaxial Planar Transistor
  • Collector-Emitter Voltage (VCEO): 60V
  • Collector-Base Voltage (VCBO): 80V
  • Emitter-Base Voltage (VEBO): 5V
  • Collector Current (IC): 2A
  • Total Power Dissipation (PT): 20W
  • Junction Temperature (Tj): 150°C
  • Storage Temperature (Tstg): -55°C to +150°C
  • DC Current Gain (hFE): 60 to 320 (at IC = 0.5A, VCE = 5V)
  • Transition Frequency (fT): 100MHz (min)

Descriptions:

  • Designed for general-purpose amplification and switching applications.
  • Suitable for audio amplifiers, power regulators, and driver circuits.
  • Encased in a TO-220 plastic package, ensuring durability and heat dissipation.

Features:

  • High current gain (hFE) range for efficient amplification.
  • Low saturation voltage, enhancing switching performance.
  • High transition frequency (fT), suitable for RF and fast-switching applications.
  • Robust thermal characteristics with a TO-220 package for heat dissipation.

This transistor is commonly used in power supply circuits, motor control, and audio amplifiers. For exact performance characteristics, refer to the TOS datasheet.

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