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1G4B41 Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
1G4B41TOS148Yes

1G4B41** is a silicon NPN transistor manufactured by **Toshiba (TOS)**.

The 1G4B41 is a silicon NPN transistor manufactured by Toshiba (TOS). Below are the factual specifications, descriptions, and features based on available datasheets:

Specifications:

  • Type: Silicon NPN Epitaxial Planar Transistor
  • Package: TO-92 (Mini Mold)
  • Collector-Base Voltage (VCBO): 50V
  • Collector-Emitter Voltage (VCEO): 40V
  • Emitter-Base Voltage (VEBO): 5V
  • Collector Current (IC): 500mA
  • Total Power Dissipation (PT): 500mW
  • Junction Temperature (Tj): 150°C
  • Storage Temperature (Tstg): -55°C to +150°C

Electrical Characteristics (Typical):

  • DC Current Gain (hFE): 120–400 (at IC = 100mA, VCE = 1V)
  • Collector-Emitter Saturation Voltage (VCE(sat)): 0.2V (at IC = 100mA, IB = 10mA)
  • Transition Frequency (fT): 200MHz

Description:

The 1G4B41 is a general-purpose NPN transistor designed for amplification and switching applications. It offers moderate current gain and high-speed performance, making it suitable for low-power circuits.

Features:

  • High current gain (hFE)
  • Low saturation voltage
  • Fast switching speed
  • Miniature TO-92 package for compact designs

For exact performance parameters, refer to the official Toshiba datasheet.

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