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2SA1451A-Y Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
2SA1451A-YTOS398Yes

2SA1451A-Y** is a PNP silicon epitaxial planar transistor manufactured by **Toshiba**.

The 2SA1451A-Y is a PNP silicon epitaxial planar transistor manufactured by Toshiba. Below are the factual specifications, descriptions, and features of this component:

Specifications:

  • Transistor Type: PNP
  • Polarity: Negative
  • Maximum Collector-Base Voltage (V_CBO): -120V
  • Maximum Collector-Emitter Voltage (V_CEO): -120V
  • Maximum Emitter-Base Voltage (V_EBO): -5V
  • Collector Current (I_C): -1.5A
  • Power Dissipation (P_C): 1W
  • Junction Temperature (T_j): 150°C
  • Storage Temperature (T_stg): -55°C to +150°C
  • DC Current Gain (h_FE): 60 to 320 (at V_CE = -5V, I_C = -0.5A)
  • Transition Frequency (f_T): 80MHz (min)
  • Package: TO-92MOD

Descriptions:

  • Designed for general-purpose amplification and switching applications.
  • Suitable for low to medium power circuits.
  • Epitaxial planar structure ensures stable performance.

Features:

  • High voltage capability.
  • Low saturation voltage.
  • High current gain (h_FE).
  • Fast switching speed.

This transistor is commonly used in audio amplifiers, power regulators, and driver circuits. For exact performance characteristics, refer to the official Toshiba datasheet.

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