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2SA495 Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
2SA495TOS403Yes

2SA495 is a PNP silicon transistor manufactured by Toshiba.

The 2SA495 is a PNP silicon transistor manufactured by Toshiba. Here are the key specifications from the TOS (Toshiba Original Specification) datasheet:

  • Type: PNP silicon transistor
  • Collector-Base Voltage (VCBO): -50V
  • Collector-Emitter Voltage (VCEO): -50V
  • Emitter-Base Voltage (VEBO): -5V
  • Collector Current (IC): -150mA
  • Power Dissipation (PC): 300mW
  • Junction Temperature (Tj): 125°C
  • Storage Temperature (Tstg): -55°C to +150°C
  • DC Current Gain (hFE): 70 to 240 (at VCE = -6V, IC = -2mA)
  • Transition Frequency (fT): 100MHz (at VCE = -10V, IC = -10mA, f = 100MHz)
  • Package: TO-92

These specifications are based on the original Toshiba datasheet for the 2SA495 transistor.

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