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2SA966 Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
2SA966TOS493Yes

2SA966 is a PNP silicon transistor manufactured by Toshiba.

The 2SA966 is a PNP silicon transistor manufactured by Toshiba. Here are the key specifications:

  • Type: PNP
  • Material: Silicon
  • Collector-Base Voltage (VCBO): -30V
  • Collector-Emitter Voltage (VCEO): -30V
  • Emitter-Base Voltage (VEBO): -5V
  • Collector Current (IC): -1.5A
  • Collector Dissipation (PC): 900mW
  • Junction Temperature (Tj): 150°C
  • Storage Temperature (Tstg): -55°C to +150°C
  • DC Current Gain (hFE): 60 to 320
  • Transition Frequency (fT): 80MHz
  • Package: TO-92

These specifications are based on the datasheet provided by Toshiba for the 2SA966 transistor.

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