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2SB834 Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
2SB834TOS200Yes

2SB834 is a PNP silicon epitaxial planar transistor manufactured by Toshiba.

The 2SB834 is a PNP silicon epitaxial planar transistor manufactured by Toshiba. Its key specifications include:

  • Collector-Base Voltage (VCBO): -60V
  • Collector-Emitter Voltage (VCEO): -50V
  • Emitter-Base Voltage (VEBO): -5V
  • Collector Current (IC): -3A
  • Collector Dissipation (PC): 25W
  • Junction Temperature (Tj): 150°C
  • Storage Temperature (Tstg): -55°C to +150°C
  • DC Current Gain (hFE): 60 to 320 (at VCE = -5V, IC = -0.5A)
  • Transition Frequency (fT): 20MHz (at VCE = -5V, IC = -0.5A, f = 1MHz)
  • Package: TO-220

These specifications are based on Toshiba's datasheet for the 2SB834 transistor.

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