Professional IC Distribution & Technical Solutions

Global leader in semiconductor components distribution and technical support services, empowering your product innovation and industry advancement

Product Catalog Contact Us
Home > TOS02 > 2SB834

2SB834 Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
2SB834TOS200Yes

2SB834 is a PNP silicon epitaxial planar transistor manufactured by Toshiba.

The 2SB834 is a PNP silicon epitaxial planar transistor manufactured by Toshiba. Its key specifications include:

  • Collector-Base Voltage (VCBO): -60V
  • Collector-Emitter Voltage (VCEO): -50V
  • Emitter-Base Voltage (VEBO): -5V
  • Collector Current (IC): -3A
  • Collector Dissipation (PC): 25W
  • Junction Temperature (Tj): 150°C
  • Storage Temperature (Tstg): -55°C to +150°C
  • DC Current Gain (hFE): 60 to 320 (at VCE = -5V, IC = -0.5A)
  • Transition Frequency (fT): 20MHz (at VCE = -5V, IC = -0.5A, f = 1MHz)
  • Package: TO-220

These specifications are based on Toshiba's datasheet for the 2SB834 transistor.

Request Quotation

Part Number:
Quantity:
Target Price($USD):
Email:
Contact Person:
Additional Part Number
Quantity (Additional)
Special Requirements
Verification: =

Recommended Products

  • TC55465AP-25 ,112,DIP28

    TC55465AP-25 is a static RAM (SRAM) manufactured by Toshiba.

  • TLP580 ,132,DIP5

    TLP580** is an optocoupler manufactured by **Toshiba (TOS)**.

  • 74HC11AP ,375,DIP14

    74HC11AP** is a triple 3-input AND gate integrated circuit manufactured by **Toshiba (TOS)**.

  • 15N03H,,19,TO252

    01183/,BOSCH,19,PLCC

Sales Support

Our sales team is ready to assist with:

  • Fast quotation
  • Price Discount
  • Technical specifications
Contact sales