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2SC1645 Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
2SC1645TOS114Yes

2SC1645** is a high-frequency NPN bipolar junction transistor (BJT) manufactured by **Toshiba**.

The 2SC1645 is a high-frequency NPN bipolar junction transistor (BJT) manufactured by Toshiba. Below are its key specifications, descriptions, and features:

Specifications:

  • Transistor Type: NPN
  • Maximum Collector-Base Voltage (VCBO): 30V
  • Maximum Collector-Emitter Voltage (VCEO): 25V
  • Maximum Emitter-Base Voltage (VEBO): 5V
  • Collector Current (IC): 50mA
  • Total Power Dissipation (PT): 200mW
  • Transition Frequency (fT): 500MHz (typical)
  • Noise Figure (NF): 3dB (typical at 100MHz)
  • Operating Temperature Range: -55°C to +125°C

Descriptions:

  • Designed for high-frequency amplification in RF and VHF applications.
  • Suitable for low-noise amplification in communication circuits.
  • Comes in a TO-92 package for easy PCB mounting.

Features:

  • High transition frequency (fT) for RF applications.
  • Low noise performance, making it ideal for receiver circuits.
  • Compact and widely used in small-signal amplification.

This transistor is commonly used in FM tuners, RF amplifiers, and oscillator circuits. For exact performance characteristics, refer to the official Toshiba datasheet.

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