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2SC2328-O Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
2SC2328-OTOS500Yes

2SC2328-O** is a silicon NPN epitaxial planar transistor manufactured by **Toshiba**.

The 2SC2328-O is a silicon NPN epitaxial planar transistor manufactured by Toshiba. Below are its key specifications, descriptions, and features:

Specifications:

  • Transistor Type: NPN
  • Maximum Collector-Base Voltage (VCBO): 50V
  • Maximum Collector-Emitter Voltage (VCEO): 50V
  • Maximum Emitter-Base Voltage (VEBO): 5V
  • Collector Current (IC): 100mA
  • Total Power Dissipation (PT): 200mW
  • Junction Temperature (Tj): 150°C
  • Storage Temperature (Tstg): -55°C to +150°C
  • DC Current Gain (hFE): 120 to 560 (at IC = 2mA, VCE = 6V)
  • Transition Frequency (fT): 200MHz (min)

Descriptions:

  • Designed for general-purpose amplification and switching applications.
  • Low noise and high-frequency performance suitable for RF and audio circuits.
  • Encapsulated in a TO-92 package for easy mounting.

Features:

  • High current gain (hFE) for improved signal amplification.
  • Low saturation voltage for efficient switching.
  • High transition frequency (fT) for RF applications.
  • Compact and reliable for consumer and industrial electronics.

This transistor is commonly used in audio amplifiers, signal processing, and low-power switching circuits.

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