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2SK170-GR Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
2SK170-GRTOS132Yes

2SK170-GR is a N-channel junction field-effect transistor (JFET) manufactured by Toshiba.

The 2SK170-GR is a N-channel junction field-effect transistor (JFET) manufactured by Toshiba. Below are the factual specifications from the Manufactor Datasheet:

  • Type: N-channel JFET
  • Manufacturer: Toshiba
  • Drain-Source Voltage (Vds): 40V
  • Gate-Source Voltage (Vgs): -40V
  • Drain Current (Id): 10mA
  • Power Dissipation (Pd): 400mW
  • Gate-Source Cutoff Voltage (Vgs(off)): -0.3V to -1.5V
  • Drain-Source On Resistance (Rds(on)): 30Ω (typical)
  • Input Capacitance (Ciss): 30pF (typical)
  • Output Capacitance (Coss): 10pF (typical)
  • Reverse Transfer Capacitance (Crss): 5pF (typical)
  • Noise Figure (NF): 1.5dB (typical) at 1kHz
  • Operating Temperature Range: -55°C to +125°C
  • Package: TO-92

These specifications are based on the datasheet provided by Toshiba for the 2SK170-GR JFET.

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