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P509 Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
P509TOS152Yes

Part Number:** P509 **Manufacturer:** TOS (Toshiba) ### **Specifications:** - **Type:** High-power switching transistor - **Material:** Silicon (Si) - **Polarity:** NPN - **Maximum Collector-Emitter Voltage (Vceo):** 60V - **Maximum Colle

Part Number: P509

Manufacturer: TOS (Toshiba)

Specifications:

  • Type: High-power switching transistor
  • Material: Silicon (Si)
  • Polarity: NPN
  • Maximum Collector-Emitter Voltage (Vceo): 60V
  • Maximum Collector Current (Ic): 10A
  • Maximum Power Dissipation (Pd): 80W
  • DC Current Gain (hFE): 40-320 (varies by operating conditions)
  • Transition Frequency (ft): 3MHz
  • Operating Temperature Range: -55°C to +150°C
  • Package Type: TO-3P (Plastic case with metal back)

Descriptions:

The P509 is a high-power NPN transistor designed for switching and amplification in high-current applications. It is commonly used in power supplies, motor control, and audio amplifiers due to its robust construction and high current-handling capability.

Features:

  • High current and power dissipation ratings
  • Low saturation voltage for efficient switching
  • High-speed switching performance
  • TO-3P package for effective heat dissipation
  • Suitable for industrial and automotive applications

This information is based on standard TOS (Toshiba) datasheet specifications. For exact performance under specific conditions, refer to the official datasheet.

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