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TD2016P Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
TD2016PTOS322Yes

TD2016P is a power transistor manufactured by **TOS (Toshiba)**.

The TD2016P is a power transistor manufactured by TOS (Toshiba). Below are the factual specifications, descriptions, and features:

Specifications:

  • Type: NPN Silicon Epitaxial Planar Transistor
  • Collector-Base Voltage (VCBO): 60V
  • Collector-Emitter Voltage (VCEO): 50V
  • Emitter-Base Voltage (VEBO): 5V
  • Collector Current (IC): 2A
  • Collector Dissipation (PC): 20W
  • Junction Temperature (Tj): 150°C
  • Storage Temperature (Tstg): -55°C to +150°C
  • DC Current Gain (hFE): 60 to 320 (at IC = 0.5A, VCE = 5V)
  • Transition Frequency (fT): 30MHz (min)

Description:

The TD2016P is a high-power NPN transistor designed for general-purpose amplification and switching applications. It features a high current capability and moderate switching speed, making it suitable for power control circuits.

Features:

  • High collector current (2A)
  • Medium power dissipation (20W)
  • High DC current gain (hFE) range
  • Low saturation voltage
  • Epitaxial planar construction for reliability

This transistor is commonly used in power amplifiers, motor drivers, and switching regulators.

For exact performance characteristics, refer to the official Toshiba datasheet.

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