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TD6118P Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
TD6118PTOS112Yes

part **TD6118P** is manufactured by **TOS (Toshiba)**.

The part TD6118P is manufactured by TOS (Toshiba).

Specifications:

  • Type: NPN Silicon Transistor
  • Application: High-speed switching
  • Collector-Emitter Voltage (VCEO): 50V
  • Collector Current (IC): 1A
  • Power Dissipation (PD): 1W
  • Transition Frequency (fT): 150MHz
  • Package: TO-92

Descriptions and Features:

  • Designed for general-purpose amplification and switching applications.
  • High-speed switching capability.
  • Low saturation voltage.
  • Suitable for driver stages in electronic circuits.

For detailed electrical characteristics, refer to the official Toshiba datasheet.

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