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SSM6K202FE,LF(CA Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
SSM6K202FE,LF(CATOSHIBA16000Yes

SSM6K202FE,LF(CA)** is a MOSFET manufactured by **TOSHIBA**.

The SSM6K202FE,LF(CA) is a MOSFET manufactured by TOSHIBA. Below are its key specifications, descriptions, and features:

Specifications:

  • Type: N-Channel MOSFET
  • Drain-Source Voltage (VDSS): 20V
  • Gate-Source Voltage (VGS): ±8V
  • Drain Current (ID): 6A (Continuous)
  • Power Dissipation (PD): 1.25W
  • On-Resistance (RDS(ON)): 18mΩ (Max) at VGS = 4.5V
  • Threshold Voltage (VGS(th)): 0.4V (Typ)
  • Package: SOT-563 (Miniature Surface-Mount)
  • Operating Temperature Range: -55°C to +150°C

Description:

The SSM6K202FE,LF(CA) is a small-signal MOSFET designed for high-efficiency switching applications. It features low on-resistance and fast switching performance, making it suitable for power management in portable devices.

Features:

  • Low RDS(ON) for reduced power loss
  • High current handling capability (6A)
  • Compact SOT-563 package for space-saving designs
  • Suitable for battery-powered and load-switching applications
  • RoHS-compliant and lead-free

This MOSFET is commonly used in DC-DC converters, power switches, and portable electronics.

(Data sourced from TOSHIBA's official specifications.)

# SSM6K202FE,LF(CA): Technical Analysis and Design Considerations

## 1. Practical Application Scenarios

The SSM6K202FE,LF(CA) is a P-channel MOSFET from Toshiba, designed for high-efficiency power management in compact electronic systems. Its key characteristics—low on-resistance (RDS(ON)), small package size (SOT-563), and fast switching—make it suitable for several applications:

A. Portable and Battery-Powered Devices

Due to its low threshold voltage and minimal leakage current, the SSM6K202FE is ideal for power switching in smartphones, tablets, and wearables. It efficiently manages battery drain by minimizing losses during standby or load switching.

B. Load Switching in IoT Modules

In IoT edge devices, the MOSFET is used for power gating, enabling energy-efficient sleep modes. Its small footprint allows integration into densely populated PCBs without compromising thermal performance.

C. Power Distribution in Automotive Electronics

The component’s robustness against voltage spikes and temperature variations makes it suitable for automotive power systems, such as infotainment modules and sensor interfaces, where reliability is critical.

D. DC-DC Converters

The low RDS(ON) reduces conduction losses in synchronous buck or boost converters, improving efficiency in point-of-load (POL) regulation circuits.

## 2. Common Design Pitfalls and Avoidance Strategies

A. Inadequate Thermal Management

Despite its small size, the SSM6K202FE can dissipate significant heat under high current. Poor PCB layout (e.g., insufficient copper area) may lead to thermal throttling or failure.

Solution:

  • Use thermal vias and wide traces to enhance heat dissipation.
  • Monitor junction temperature in high-current applications.

B. Incorrect Gate Drive Voltage

Applying a gate-source voltage (VGS) outside the specified range (e.g., exceeding ±8V) can degrade performance or damage the MOSFET.

Solution:

  • Ensure gate driver output matches the recommended VGS range.
  • Implement level-shifting circuits if interfacing with higher-voltage logic.

C. Poor Layout for High-Speed Switching

Parasitic inductance in the gate loop can cause ringing, leading to EMI or unintended turn-on.

Solution:

  • Minimize gate trace length and loop area.
  • Use a low-impedance gate driver and decoupling capacitors near the MOSFET.

D. Overlooking ESD Sensitivity

The SOT-563 package’s small size increases susceptibility to electrostatic discharge (ESD).

Solution:

  • Follow ESD handling protocols during assembly.
  • Incorporate transient voltage suppressors (TVS) in high-risk environments.

## 3. Key Technical Considerations for Implementation

A. Electrical Parameters

  • Threshold Voltage (VGS(th)): Ensure compatibility with control logic levels.
  • Continuous Drain Current (ID): Verify derating at elevated temperatures.
  • RDS(ON): Account for conduction losses in efficiency calculations.

B. PCB Layout Recommendations

  • Place input/output capacitors close to drain and source pins.
  • Use a ground plane to reduce noise and improve thermal conductivity.

C

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