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TLG335T Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
TLG335TTOSHIBA500Yes

TLG335T** is a semiconductor device manufactured by **TOSHIBA**.

The TLG335T is a semiconductor device manufactured by TOSHIBA. Below are its key specifications, descriptions, and features:

Specifications:

  • Manufacturer: TOSHIBA
  • Type: Digital Logic IC (Gate)
  • Logic Family: CMOS
  • Function: Triple 3-Input NAND Gate
  • Supply Voltage (VDD): 3V to 18V
  • Operating Temperature Range: -40°C to +85°C
  • Package Type: TSSOP (Thin Shrink Small Outline Package)
  • Number of Pins: 14
  • Propagation Delay: Typically 50ns (varies with voltage)
  • Input Current (Max): ±1μA
  • Output Current (Max): ±4mA

Descriptions:

The TLG335T is a CMOS-based triple 3-input NAND gate IC designed for digital logic applications. It operates over a wide voltage range (3V to 18V), making it suitable for various circuit designs. The device is housed in a TSSOP-14 package, providing a compact footprint for space-constrained applications.

Features:

  • Triple 3-Input NAND Gates in a single IC
  • Wide Operating Voltage Range (3V–18V)
  • Low Power Consumption (CMOS technology)
  • High Noise Immunity
  • Balanced Propagation Delays
  • Compatible with TTL and CMOS Logic Levels
  • TSSOP-14 Package for Compact PCB Design

This IC is commonly used in digital circuits, signal processing, and control systems where multiple NAND gate functions are required.

For detailed electrical characteristics and application notes, refer to the official TOSHIBA datasheet.

# TLG335T: Application Scenarios, Design Considerations, and Implementation

## Practical Application Scenarios

The TLG335T from Toshiba is a high-performance semiconductor device, typically employed in power management and switching applications. Its key characteristics—low on-resistance, high-speed switching, and robust thermal performance—make it suitable for several critical use cases:

1. DC-DC Converters

The TLG335T is widely used in synchronous buck and boost converters, where its low RDS(on) minimizes conduction losses, improving efficiency in voltage regulation circuits. Its fast switching capability ensures minimal switching losses, making it ideal for high-frequency power supplies.

2. Motor Drive Circuits

In brushed and brushless DC motor control systems, the TLG335T serves as a reliable switching element. Its ability to handle high peak currents ensures smooth PWM-based speed control, particularly in automotive and industrial automation applications.

3. Load Switching in Portable Electronics

The component’s compact footprint and low leakage current make it suitable for battery-powered devices, such as smartphones and tablets, where efficient power distribution is critical.

4. Protection Circuits

The TLG335T is often integrated into overcurrent and reverse-polarity protection circuits due to its fast response time and robustness under fault conditions.

## Common Design-Phase Pitfalls and Avoidance Strategies

1. Thermal Management Oversights

Despite its low RDS(on), the TLG335T can generate significant heat under high-load conditions. Poor PCB layout or inadequate heatsinking may lead to thermal runaway.

*Mitigation:*

  • Use thermal vias and sufficient copper area for heat dissipation.
  • Monitor junction temperature with embedded sensors if possible.

2. Improper Gate Drive Design

Inadequate gate drive voltage or excessive gate resistance can increase switching losses and reduce efficiency.

*Mitigation:*

  • Ensure gate drive voltage meets datasheet specifications (typically 4.5V–10V).
  • Optimize gate resistor values to balance switching speed and EMI.

3. Voltage Transient Susceptibility

Inductive loads can cause voltage spikes, risking device failure.

*Mitigation:*

  • Implement snubber circuits or freewheeling diodes to clamp transients.
  • Select a device with sufficient VDS rating margin.

4. Inadequate Current Handling

Overestimating continuous current capability without derating for temperature can lead to premature failure.

*Mitigation:*

  • Derate current based on ambient temperature and thermal resistance.
  • Use parallel devices for high-current applications.

## Key Technical Considerations for Implementation

1. Electrical Parameters

  • Verify VDS(max), ID(max), and RDS(on) under expected operating conditions.
  • Ensure gate threshold voltage (VGS(th)) aligns with control logic levels.

2. PCB Layout Best Practices

  • Minimize parasitic inductance in high-current paths.
  • Place decoupling capacitors close to the drain and source terminals.

3. ESD and Static Sensitivity

The TLG335T may be sensitive to electrostatic discharge. Follow ESD handling protocols during assembly.

4. Compatibility with Control ICs

Ensure

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