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2SA1213 Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
2SA1213TOSHIBA944Yes

2SA1213 is a PNP silicon transistor manufactured by Toshiba.

The 2SA1213 is a PNP silicon transistor manufactured by Toshiba. Here are the key specifications from the TOS (Toshiba) datasheet:

  • Type: PNP Silicon Epitaxial Planar Transistor
  • Collector-Base Voltage (VCBO): -50V
  • Collector-Emitter Voltage (VCEO): -50V
  • Emitter-Base Voltage (VEBO): -5V
  • Collector Current (IC): -1.5A
  • Collector Dissipation (PC): 1W
  • Junction Temperature (Tj): 150°C
  • Storage Temperature (Tstg): -55°C to +150°C
  • DC Current Gain (hFE): 60 to 320 (at VCE = -5V, IC = -150mA)
  • Transition Frequency (fT): 80MHz (at VCE = -5V, IC = -150mA, f = 100MHz)
  • Package: TO-92MOD

These specifications are based on the Toshiba datasheet for the 2SA1213 transistor.

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