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2SC2483-Y Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
2SC2483-YTOSHIBA200Yes

2SC2483-Y** is a silicon NPN epitaxial planar transistor manufactured by **TOSHIBA**.

The 2SC2483-Y is a silicon NPN epitaxial planar transistor manufactured by TOSHIBA. Below are its specifications, descriptions, and features:

Specifications:

  • Transistor Type: NPN
  • Collector-Base Voltage (VCBO): 150V
  • Collector-Emitter Voltage (VCEO): 150V
  • Emitter-Base Voltage (VEBO): 5V
  • Collector Current (IC): 100mA
  • Collector Power Dissipation (PC): 200mW
  • Junction Temperature (Tj): 150°C
  • DC Current Gain (hFE): 60 ~ 320 (at VCE = 6V, IC = 1mA)
  • Transition Frequency (fT): 80MHz (Typical)
  • Noise Figure (NF): 1dB (Typical at f = 1kHz, IC = 0.1mA)

Descriptions:

  • Designed for general-purpose amplification and switching applications.
  • Suitable for low-noise, high-gain amplification in audio and RF circuits.
  • Epitaxial planar construction ensures reliability and performance stability.

Features:

  • Low Noise: Optimized for low-noise signal amplification.
  • High DC Current Gain (hFE): Provides good amplification efficiency.
  • Compact Package: Available in a small TO-92 package for easy PCB mounting.
  • Wide Operating Range: Suitable for various electronic circuits.

For detailed electrical characteristics and application notes, refer to the official TOSHIBA datasheet.

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