The 2SC2483-Y is a silicon NPN epitaxial planar transistor manufactured by TOSHIBA. Below are its specifications, descriptions, and features:
Specifications:
- Transistor Type: NPN
- Collector-Base Voltage (VCBO): 150V
- Collector-Emitter Voltage (VCEO): 150V
- Emitter-Base Voltage (VEBO): 5V
- Collector Current (IC): 100mA
- Collector Power Dissipation (PC): 200mW
- Junction Temperature (Tj): 150°C
- DC Current Gain (hFE): 60 ~ 320 (at VCE = 6V, IC = 1mA)
- Transition Frequency (fT): 80MHz (Typical)
- Noise Figure (NF): 1dB (Typical at f = 1kHz, IC = 0.1mA)
Descriptions:
- Designed for general-purpose amplification and switching applications.
- Suitable for low-noise, high-gain amplification in audio and RF circuits.
- Epitaxial planar construction ensures reliability and performance stability.
Features:
- Low Noise: Optimized for low-noise signal amplification.
- High DC Current Gain (hFE): Provides good amplification efficiency.
- Compact Package: Available in a small TO-92 package for easy PCB mounting.
- Wide Operating Range: Suitable for various electronic circuits.
For detailed electrical characteristics and application notes, refer to the official TOSHIBA datasheet.