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Detailed technical information and Application Scenarios
| PartNumber | Manufactor | Quantity | Availability |
|---|---|---|---|
| 2SD2012 | TOSHIBA | 105 | Yes |
The 2SD2012 is a silicon NPN epitaxial planar transistor manufactured by Toshiba. Here are the key specifications:
These specifications are based on the datasheet provided by Toshiba for the 2SD2012 transistor.
Part Number:** SS184, LF(T) **Manufacturer:** Toshiba ### **Specifications:** - **Type:** Schottky Barrier Diode - **Package:** SOD-123FL (Miniature Surface Mount) - **Maximum Reverse Voltage (VR):** 40V - **Average Rectified Current (IO):*
TD62107P is a high-voltage, high-current Darlington transistor array manufactured by Toshiba.
74HC245AP** is an octal bus transceiver manufactured by **TOSHIBA**.
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