The T3G30F is a power MOSFET manufactured by TOSHIBA. Below are its key specifications, descriptions, and features:
Specifications:
- Type: N-Channel Power MOSFET
- Drain-Source Voltage (VDSS): 30V
- Continuous Drain Current (ID): 30A
- Pulsed Drain Current (IDM): 120A
- Power Dissipation (PD): 30W
- Gate-Source Voltage (VGS): ±20V
- On-Resistance (RDS(on)): 6.5mΩ (max) @ VGS = 10V
- Threshold Voltage (VGS(th)): 1.0V (min) – 2.5V (max)
- Input Capacitance (Ciss): 1500pF (typ)
- Package: TO-220F (Fully Molded)
Descriptions:
- Designed for high-efficiency power switching applications.
- Low on-resistance for reduced conduction losses.
- Fast switching performance.
- Fully molded TO-220F package for improved thermal performance.
Features:
- Low RDS(on): Minimizes power loss in switching applications.
- High Current Capability: Supports up to 30A continuous drain current.
- Fast Switching Speed: Suitable for high-frequency applications.
- Improved Thermal Performance: Fully molded package enhances heat dissipation.
- Wide Gate-Source Voltage Range: Operates efficiently with VGS up to ±20V.
This MOSFET is commonly used in power management, motor control, DC-DC converters, and other high-current switching applications.