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1B4B41 Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
1B4B41TOSHIBA477Yes

TOSHIBA part 1B4B41** is a semiconductor component, specifically a **MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor)**.

The TOSHIBA part 1B4B41 is a semiconductor component, specifically a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor). Below are its key specifications, descriptions, and features:

Specifications:

  • Manufacturer: Toshiba
  • Part Number: 1B4B41
  • Type: N-Channel MOSFET
  • Package: SOP-8 (Small Outline Package, 8-pin)
  • Drain-Source Voltage (VDSS): 60V
  • Continuous Drain Current (ID): 4A
  • Power Dissipation (PD): 2W
  • Gate-Source Voltage (VGS): ±20V
  • On-Resistance (RDS(on)): 50mΩ (typical)
  • Threshold Voltage (VGS(th)): 1.5V (typical)

Descriptions:

  • Designed for switching applications in power management circuits.
  • Suitable for DC-DC converters, motor control, and load switching.
  • Features low on-resistance for efficient power handling.

Features:

  • Low RDS(on) for reduced conduction losses.
  • Fast switching speed for high-frequency applications.
  • Compact SOP-8 package for space-saving PCB designs.
  • High voltage tolerance (60V) for robust performance.

This MOSFET is commonly used in consumer electronics, automotive systems, and industrial applications where efficient power switching is required.

For detailed datasheets, refer to Toshiba’s official documentation.

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