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1SS367(TPH3,F) Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
1SS367(TPH3,F)TOSHIBA21000Yes

TOSHIBA SS367(TPH3,F)** is a phototransistor coupler designed for high-speed signal transmission and isolation in electronic circuits.

The TOSHIBA SS367(TPH3,F) is a phototransistor coupler designed for high-speed signal transmission and isolation in electronic circuits. Below are the factual specifications, descriptions, and features:

Specifications:

  • Manufacturer: TOSHIBA
  • Model: SS367(TPH3,F)
  • Type: Phototransistor Output Optocoupler
  • Isolation Voltage: 5000Vrms (min)
  • Collector-Emitter Voltage (VCEO): 30V
  • Emitter-Collector Voltage (VECO): 5V
  • Collector Current (IC): 50mA (max)
  • Power Dissipation (PC): 100mW (max)
  • Current Transfer Ratio (CTR): 50% (min) at IF = 5mA, VCE = 5V
  • Response Time (tPLH / tPHL): 3μs (max)
  • Operating Temperature Range: -55°C to +100°C
  • Package Type: 4-pin DIP (Dual In-line Package)

Descriptions:

  • The SS367(TPH3,F) is a high-speed optocoupler with a phototransistor output, providing electrical isolation between input and output circuits.
  • It is commonly used in signal isolation, switching power supplies, and digital logic interfacing.

Features:

  • High-Speed Response: Suitable for fast signal transmission.
  • High Isolation Voltage: Ensures reliable electrical separation.
  • Compact DIP Package: Easy to integrate into PCB designs.
  • Wide Operating Temperature Range: Suitable for industrial applications.

This information is based on TOSHIBA's official datasheet for the SS367(TPH3,F). For detailed performance characteristics, refer to the manufacturer's documentation.

# 1SS367(TPH3,F) Diode: Technical Analysis and Implementation Guide

## Practical Application Scenarios

The 1SS367(TPH3,F) from Toshiba is a high-speed switching diode designed for applications requiring fast response times and low forward voltage. Key use cases include:

1. High-Frequency Signal Rectification

Due to its ultra-fast reverse recovery time (typically 4ns), the 1SS367 is ideal for RF and microwave signal detection, mixers, and demodulation circuits. Its low capacitance (~0.5pF) minimizes signal distortion in high-frequency environments.

2. Protection Circuits

The diode is commonly used in clamping and transient voltage suppression (TVS) applications. Its ability to handle sudden voltage spikes makes it suitable for protecting sensitive ICs in communication interfaces (e.g., USB, HDMI).

3. Switching Power Supplies

In DC-DC converters and SMPS, the 1SS367’s low forward voltage (~0.5V at 10mA) reduces power losses, improving efficiency in high-speed switching topologies.

4. Logic Level Shifting

The diode’s fast switching characteristics enable clean level translation in digital circuits, such as interfacing between 3.3V and 5V systems.

## Common Design Pitfalls and Avoidance Strategies

1. Overlooking Reverse Recovery Effects

Pitfall: Even with a fast recovery time, improper PCB layout or excessive reverse voltage can lead to oscillations or power dissipation issues.

Solution: Ensure minimal trace inductance and avoid exceeding the maximum reverse voltage (VR = 30V). Use a snubber circuit if necessary.

2. Thermal Mismanagement

Pitfall: High-frequency switching or prolonged forward current (IF = 100mA max) can cause junction temperature rise, degrading performance.

Solution: Monitor operating temperature and adhere to derating guidelines. Use a heatsink or wider PCB traces for better thermal dissipation.

3. Incorrect Biasing in RF Applications

Pitfall: Misbiasing the diode in detector circuits can lead to nonlinearity or sensitivity loss.

Solution: Optimize bias current (typically 10–100µA) for the desired dynamic range and linearity.

4. Poor ESD Handling

Pitfall: Despite its robustness, improper handling during assembly can introduce ESD damage.

Solution: Follow ESD-safe practices during soldering and PCB assembly.

## Key Technical Considerations for Implementation

1. Forward Voltage vs. Current Trade-off

  • At higher currents (e.g., 50mA), VF increases slightly (~0.7V), impacting efficiency in low-voltage designs.

2. Capacitance and Frequency Response

  • The junction capacitance (Cj) must be considered in high-speed applications to avoid signal attenuation.

3. Package Constraints (SOD-323F)

  • The compact package requires precise soldering to avoid bridging or cold joints.

4. Reverse Leakage Current

  • IR (typically 0.1µA at VR = 20V) can affect precision circuits; verify leakage under operating conditions.

By addressing these factors, designers

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