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2SA1013-O Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
2SA1013-OTOSHIBA2228Yes

2SA1013-O** is a PNP bipolar junction transistor (BJT) manufactured by **TOSHIBA**.

The 2SA1013-O is a PNP bipolar junction transistor (BJT) manufactured by TOSHIBA. Below are its key specifications, descriptions, and features:

Specifications:

  • Transistor Type: PNP
  • Collector-Base Voltage (VCBO): -50V
  • Collector-Emitter Voltage (VCEO): -50V
  • Emitter-Base Voltage (VEBO): -5V
  • Collector Current (IC): -1A
  • Power Dissipation (PC): 900mW
  • DC Current Gain (hFE): 60 to 320 (varies by grade)
  • Transition Frequency (fT): 100MHz
  • Operating Temperature Range: -55°C to +150°C

Description:

The 2SA1013-O is a high-voltage, medium-power PNP transistor designed for general-purpose amplification and switching applications. It is part of Toshiba’s 2SA1013 series, known for reliability and performance in electronic circuits.

Features:

  • High Voltage Capability: Suitable for circuits requiring up to 50V.
  • High Current Gain (hFE): Provides good amplification efficiency.
  • Fast Switching Speed: Transition frequency of 100MHz enables use in RF and high-speed applications.
  • Low Saturation Voltage: Improves efficiency in switching applications.
  • Compact Package: Available in TO-92 package for easy PCB mounting.

Applications:

  • Audio amplification
  • Signal processing
  • Switching circuits
  • Driver stages

For detailed datasheet information, refer to Toshiba’s official documentation.

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