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2SA1358-O Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
2SA1358-OTOSHIBA500Yes

2SA1358-O** is a PNP silicon epitaxial planar transistor manufactured by **Toshiba**.

The 2SA1358-O is a PNP silicon epitaxial planar transistor manufactured by Toshiba. Below are its key specifications, descriptions, and features:

Specifications:

  • Transistor Type: PNP
  • Collector-Base Voltage (VCBO): -50V
  • Collector-Emitter Voltage (VCEO): -50V
  • Emitter-Base Voltage (VEBO): -5V
  • Collector Current (IC): -1.5A
  • Collector Dissipation (PC): 1W (Ta = 25°C)
  • Junction Temperature (Tj): 150°C
  • Storage Temperature (Tstg): -55°C to +150°C
  • DC Current Gain (hFE): 60 to 320 (at VCE = -5V, IC = -150mA)
  • Transition Frequency (fT): 80MHz (min)
  • Package: TO-92MOD

Descriptions:

  • Designed for general-purpose amplification and switching applications.
  • Suitable for low to medium power circuits.
  • Epitaxial planar construction ensures reliability and performance.

Features:

  • High current gain (hFE) range.
  • Low saturation voltage for efficient switching.
  • Compact TO-92MOD package for space-saving designs.
  • Good frequency response (fT ≥ 80MHz).

For detailed electrical characteristics and application notes, refer to the official Toshiba datasheet.

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