Professional IC Distribution & Technical Solutions

Global leader in semiconductor components distribution and technical support services, empowering your product innovation and industry advancement

Product Catalog Contact Us
Home > TOSHIBA03 > 2SC1166

2SC1166 Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
2SC1166TOSHIBA193Yes

2SC1166** is a silicon NPN transistor manufactured by **TOSHIBA**.

The 2SC1166 is a silicon NPN transistor manufactured by TOSHIBA. Below are its key specifications, descriptions, and features:

Specifications:

  • Transistor Type: NPN
  • Material: Silicon (Si)
  • Maximum Collector-Base Voltage (VCBO): 50V
  • Maximum Collector-Emitter Voltage (VCEO): 40V
  • Maximum Emitter-Base Voltage (VEBO): 5V
  • Collector Current (IC): 0.5A
  • Total Power Dissipation (PT): 0.5W
  • Junction Temperature (Tj): 125°C
  • Transition Frequency (fT): 150MHz
  • DC Current Gain (hFE): 60 – 320 (depending on operating conditions)
  • Package Type: TO-92

Descriptions:

  • The 2SC1166 is a general-purpose NPN transistor designed for amplification and switching applications.
  • It is commonly used in low-power circuits, audio amplifiers, and signal processing.

Features:

  • High Current Gain (hFE): Provides good amplification characteristics.
  • Low Noise: Suitable for audio applications.
  • Compact TO-92 Package: Easy to use in PCB designs.
  • Reliable Performance: Manufactured by Toshiba with consistent quality.

This transistor is now considered obsolete, but equivalent replacements may be available depending on application requirements.

Would you like additional details on pin configuration or equivalent alternatives?

Request Quotation

Part Number:
Quantity:
Target Price($USD):
Email:
Contact Person:
Additional Part Number
Quantity (Additional)
Special Requirements
Verification: =

Recommended Products

  • 1SS226 ,2240,SOT23

    1SS226 is a silicon epitaxial planar diode manufactured by STMicroelectronics.

  • 2SA2060(TE12L,F) ,63000,SOT-89年份：21+

    2SA2060(TE12L,F)** is a PNP bipolar junction transistor (BJT) manufactured by **TOSHIBA**.

  • TD62004F ,292,SOP16

    TD62004F is a Darlington transistor array manufactured by Toshiba.

  • MAS7844EM,,17,DIP28

    VC2816PC,VLSI,17,DIP40

Sales Support

Our sales team is ready to assist with:

  • Fast quotation
  • Price Discount
  • Technical specifications
Contact sales