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2SC2120 Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
2SC2120TOSHIBA324Yes

2SC2120** is a silicon NPN epitaxial planar transistor manufactured by **TOSHIBA**.

The 2SC2120 is a silicon NPN epitaxial planar transistor manufactured by TOSHIBA. Below are its key specifications, descriptions, and features:

Specifications:

  • Transistor Type: NPN
  • Material: Silicon (Si)
  • Maximum Collector-Base Voltage (VCBO): 50V
  • Maximum Collector-Emitter Voltage (VCEO): 50V
  • Maximum Emitter-Base Voltage (VEBO): 5V
  • Collector Current (IC): 0.7A
  • Power Dissipation (PC): 0.8W
  • Junction Temperature (Tj): 125°C
  • Transition Frequency (fT): 120MHz
  • DC Current Gain (hFE): 60 to 320 (at VCE = 6V, IC = 0.1A)
  • Package Type: TO-92

Descriptions:

  • Designed for general-purpose amplification and switching applications.
  • Suitable for low-power circuits requiring moderate frequency performance.
  • Commonly used in audio amplifiers, signal processing, and driver stages.

Features:

  • High DC current gain (hFE).
  • Low saturation voltage.
  • Reliable performance in small-signal applications.
  • Compact TO-92 package for easy PCB mounting.

For exact application circuits and further details, refer to the official TOSHIBA datasheet.

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