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2SC2712GR(LG) Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
2SC2712GR(LG)TOSHIBA2800Yes

2SC2712GR(LG)** is a high-frequency NPN bipolar junction transistor (BJT) manufactured by **TOSHIBA**.

The 2SC2712GR(LG) is a high-frequency NPN bipolar junction transistor (BJT) manufactured by TOSHIBA. Below are its key specifications, descriptions, and features:

Specifications:

  • Transistor Type: NPN
  • Maximum Collector-Base Voltage (VCB): 30V
  • Maximum Collector-Emitter Voltage (VCE): 20V
  • Maximum Emitter-Base Voltage (VEB): 5V
  • Collector Current (IC): 100mA
  • Total Power Dissipation (Ptot): 150mW
  • Transition Frequency (fT): 600MHz (typical)
  • DC Current Gain (hFE): 70 ~ 240 (at VCE = 6V, IC = 1mA)
  • Package Type: SOT-23 (Miniature Surface-Mount)

Descriptions:

  • Designed for high-frequency amplification and switching applications.
  • Suitable for RF and VHF circuits due to its high transition frequency (fT).
  • Compact SOT-23 package for space-constrained PCB designs.

Features:

  • Low noise performance for signal amplification.
  • High-speed switching capability.
  • Small form factor, ideal for portable and compact electronics.

This transistor is commonly used in RF amplifiers, oscillators, and high-frequency signal processing circuits.

For detailed electrical characteristics and application notes, refer to the official TOSHIBA datasheet.

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