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2SC2873-Y(TE12L,ZC) Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
2SC2873-Y(TE12L,ZC)TOSHIBA21000Yes

2SC2873-Y(TE12L,ZC)** is a high-frequency NPN bipolar junction transistor (BJT) manufactured by **TOSHIBA**.

The 2SC2873-Y(TE12L,ZC) is a high-frequency NPN bipolar junction transistor (BJT) manufactured by TOSHIBA. Below are its key specifications, descriptions, and features:

Specifications:

  • Transistor Type: NPN
  • Maximum Collector-Base Voltage (VCBO): 300V
  • Maximum Collector-Emitter Voltage (VCEO): 200V
  • Maximum Emitter-Base Voltage (VEBO): 6V
  • Collector Current (IC): 100mA
  • Total Power Dissipation (PT): 1.5W
  • Transition Frequency (fT): 200MHz
  • DC Current Gain (hFE): 40 to 320 (at VCE = 10V, IC = 10mA)
  • Operating Temperature Range: -55°C to +150°C

Descriptions:

  • Designed for high-frequency amplification in RF and communication circuits.
  • Suitable for VHF/UHF applications such as FM tuners and RF amplifiers.
  • Low noise performance, making it ideal for signal processing.
  • Surface-mount package (SOT-89) for compact PCB designs.

Features:

  • High voltage capability (up to 300V VCBO).
  • High transition frequency (fT = 200MHz) for fast switching and RF applications.
  • Wide hFE range (40–320) for flexible circuit design.
  • Suitable for small-signal amplification in RF and IF stages.

This transistor is commonly used in radio frequency (RF) amplifiers, oscillators, and communication circuits due to its high-frequency performance and reliability.

For detailed datasheets, refer to TOSHIBA's official documentation.

# 2SC2873-Y(TE12L,ZC) NPN Transistor: Application, Design, and Implementation

## Practical Application Scenarios

The Toshiba 2SC2873-Y(TE12L,ZC) is a high-frequency NPN bipolar junction transistor (BJT) optimized for RF amplification in communication systems. Key applications include:

  • RF Power Amplifiers in VHF/UHF Bands: The transistor’s high transition frequency (*fₜ*) and excellent gain characteristics make it suitable for RF stages in two-way radios, amateur radio transceivers, and base station amplifiers.
  • Low-Noise Amplifiers (LNAs): Its low noise figure (NF) allows for use in sensitive receiver front-ends, improving signal-to-noise ratio in wireless communication systems.
  • Oscillator Circuits: The 2SC2873-Y(TE12L,ZC) can be employed in Colpitts or Clapp oscillators due to its stable high-frequency performance.
  • Industrial RF Equipment: Used in RF generators, medical diathermy machines, and industrial heating systems where consistent RF output is required.

Designers should ensure proper impedance matching and thermal management to maximize efficiency in these applications.

## Common Design-Phase Pitfalls and Avoidance Strategies

1. Thermal Runaway in High-Power Operation

The 2SC2873-Y(TE12L,ZC) can experience thermal instability if junction temperatures exceed rated limits.

  • Mitigation:
  • Use a heatsink with adequate thermal resistance.
  • Implement emitter degeneration resistors to stabilize bias current.
  • Monitor operating temperature with thermal sensors.

2. Oscillation Due to Poor Layout

Parasitic inductance/capacitance in PCB traces can lead to unintended oscillations.

  • Mitigation:
  • Keep RF traces short and use ground planes to minimize stray inductance.
  • Apply proper decoupling capacitors near the collector and base terminals.
  • Use shielded enclosures for sensitive RF stages.

3. Mismatched Impedance Leading to Gain Reduction

Incorrect matching networks can degrade power transfer efficiency.

  • Mitigation:
  • Simulate matching networks using tools like ADS or SPICE.
  • Verify impedance with a vector network analyzer (VNA) during prototyping.

## Key Technical Considerations for Implementation

1. Biasing Requirements

  • The transistor operates optimally with a collector current (*I_C*) of 50–100 mA and a collector-emitter voltage (*V_CE*) of 12–15V.
  • Base bias should be stabilized using a voltage divider or active bias circuit to prevent drift.

2. RF Stability Analysis

  • Ensure stability across the operating bandwidth by analyzing the Rollett stability factor (*K*).
  • Use series resistors or ferrite beads to suppress high-frequency parasitic oscillations.

3. Package and Mounting

  • The 2SC2873-Y(TE12L,ZC) comes in a surface-mount (SOT-89) package, requiring careful soldering to avoid thermal damage.
  • Ensure PCB pads are designed per manufacturer recommendations to minimize parasitic effects.

By addressing these factors, designers can leverage the 2SC2873-Y(TE12L

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