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The TOSHIBA 2SC380-Y is a high-frequency NPN silicon transistor primarily designed for RF amplification applications. Below are its key specifications, descriptions, and features:

Specifications:

• Transistor Type: NPN
• Material: Silicon (Si)
• Maximum Collector-Base Voltage (Vcb): 30V
• Maximum Collector-Emitter Voltage (Vce): 15V
• Maximum Emitter-Base Voltage (Veb): 3V
• Maximum Collector Current (Ic): 50mA
• Total Power Dissipation (Ptot): 300mW
• Transition Frequency (fT): 600MHz (min)
• Noise Figure (NF): 3dB (typical at 100MHz)
• Gain Bandwidth Product (GBP): High (suitable for RF amplification)
• Operating Temperature Range: -55°C to +125°C

Descriptions:

• Designed for RF and VHF amplification in communication equipment.
• Low noise and high gain characteristics make it suitable for oscillator and mixer circuits.
• Encased in a TO-92 package, ensuring compactness and ease of mounting.

Features:

• High transition frequency (fT) for stable RF performance.
• Low noise figure for improved signal clarity.
• Reliable silicon construction for durability in various environments.
• Compact TO-92 package for easy PCB integration.

This transistor is commonly used in radio transmitters, receivers, and other RF circuits where high-frequency amplification is required.

(Note: Always refer to the official TOSHIBA datasheet for precise electrical characteristics and application guidelines.)