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2SC380-Y Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
2SC380-YTOSHIBA1970Yes

TOSHIBA 2SC380-Y** is a high-frequency NPN silicon transistor primarily designed for RF amplification applications.

The TOSHIBA 2SC380-Y is a high-frequency NPN silicon transistor primarily designed for RF amplification applications. Below are its key specifications, descriptions, and features:

Specifications:

  • Transistor Type: NPN
  • Material: Silicon (Si)
  • Maximum Collector-Base Voltage (Vcb): 30V
  • Maximum Collector-Emitter Voltage (Vce): 15V
  • Maximum Emitter-Base Voltage (Veb): 3V
  • Maximum Collector Current (Ic): 50mA
  • Total Power Dissipation (Ptot): 300mW
  • Transition Frequency (fT): 600MHz (min)
  • Noise Figure (NF): 3dB (typical at 100MHz)
  • Gain Bandwidth Product (GBP): High (suitable for RF amplification)
  • Operating Temperature Range: -55°C to +125°C

Descriptions:

  • Designed for RF and VHF amplification in communication equipment.
  • Low noise and high gain characteristics make it suitable for oscillator and mixer circuits.
  • Encased in a TO-92 package, ensuring compactness and ease of mounting.

Features:

  • High transition frequency (fT) for stable RF performance.
  • Low noise figure for improved signal clarity.
  • Reliable silicon construction for durability in various environments.
  • Compact TO-92 package for easy PCB integration.

This transistor is commonly used in radio transmitters, receivers, and other RF circuits where high-frequency amplification is required.

(Note: Always refer to the official TOSHIBA datasheet for precise electrical characteristics and application guidelines.)

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