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CRS10I30C(TE85L,QM Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
CRS10I30C(TE85L,QMTOSHIBA30000Yes

CRS10I30C(TE85L,QM)** is a semiconductor component manufactured by **TOSHIBA**.

The CRS10I30C(TE85L,QM) is a semiconductor component manufactured by TOSHIBA. Below are its key specifications, descriptions, and features:

Specifications:

  • Manufacturer: TOSHIBA
  • Part Number: CRS10I30C(TE85L,QM)
  • Type: Schottky Barrier Diode (SBD)
  • Configuration: Single diode
  • Maximum Reverse Voltage (VR): 30V
  • Forward Current (IF): 1A
  • Forward Voltage (VF): 0.38V (typical at IF = 1A)
  • Reverse Leakage Current (IR): 50μA (max at VR = 30V)
  • Junction Capacitance (Cj): 20pF (typical at VR = 0V, f = 1MHz)
  • Operating Temperature Range: -55°C to +125°C
  • Package: SOD-323 (SC-76)

Descriptions:

  • A Schottky Barrier Diode designed for high-speed switching applications.
  • Low forward voltage drop ensures high efficiency in power circuits.
  • Suitable for rectification, clamping, and protection circuits in portable devices and power supplies.

Features:

  • Low power loss due to minimal forward voltage.
  • Fast switching performance for high-frequency applications.
  • Compact SOD-323 package for space-constrained PCB designs.
  • High reliability with robust construction.

For detailed datasheets and application notes, refer to TOSHIBA’s official documentation.

# CRS10I30C(TE85L,QM) Technical Analysis

## Practical Application Scenarios

The CRS10I30C(TE85L,QM) is a high-performance Schottky barrier diode from Toshiba, designed for applications requiring low forward voltage drop and fast switching. Its primary use cases include:

1. Power Supply Circuits

  • Used in synchronous rectification for DC-DC converters, improving efficiency by minimizing conduction losses.
  • Suitable for secondary-side rectification in switch-mode power supplies (SMPS) due to its low VF (forward voltage) and high surge current tolerance.

2. Reverse Polarity Protection

  • Deployed in battery-powered systems (e.g., portable electronics, automotive modules) to prevent damage from incorrect power connections.

3. High-Frequency Circuits

  • Ideal for freewheeling diodes in PWM-driven motor control or inductive load switching, where fast reverse recovery time (trr) reduces switching losses.

4. Solar Power Systems

  • Employed in bypass diodes for photovoltaic panels to mitigate hotspot effects during partial shading.

## Common Design-Phase Pitfalls and Avoidance Strategies

1. Thermal Management Oversights

  • *Pitfall:* Excessive junction temperature due to inadequate heatsinking or poor PCB layout, leading to premature failure.
  • *Solution:* Calculate power dissipation (P = VF × IF) and ensure proper thermal vias or heatsinks. Monitor operating temperature under maximum load.

2. Voltage/Current Rating Misapplication

  • *Pitfall:* Operating near absolute maximum ratings (e.g., 30V reverse voltage) without derating, risking breakdown.
  • *Solution:* Derate voltage/current by 20–30% for margin, especially in high-temperature environments.

3. Inadequate Surge Protection

  • *Pitfall:* Ignoring transient currents (e.g., inrush currents in SMPS), causing diode degradation.
  • *Solution:* Use parallel TVS diodes or current-limiting resistors where surge events are anticipated.

4. Layout-Induced Noise

  • *Pitfall:* Long trace lengths or poor grounding increasing EMI in high-frequency applications.
  • *Solution:* Minimize loop area, use short traces, and place decoupling capacitors close to the diode.

## Key Technical Considerations for Implementation

1. Electrical Parameters

  • Forward voltage (VF): Typically 0.49V at 10A (25°C). Ensure compatibility with system efficiency targets.
  • Reverse leakage current (IR): <100µA at 30V. Critical for low-power designs.

2. Package Constraints

  • TO-220AB package requires mechanical mounting considerations (e.g., torque specifications for screws).

3. Environmental Robustness

  • Verify operating temperature range (-55°C to +150°C) aligns with application requirements, particularly in automotive or industrial settings.

4. Compatibility with Other Components

  • Pair with MOSFETs or controllers (e.g., Toshiba’s TPH1R406PL) for optimized synchronous rectification.

By addressing these factors, designers can leverage the CRS10I30C(TE85L,QM) effectively while mitigating risks

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