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TB1202N Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
TB1202NTOSHIBA1910Yes

TB1202N** is a power transistor module manufactured by **TOSHIBA**.

The TB1202N is a power transistor module manufactured by TOSHIBA. Below are its key specifications, descriptions, and features:

Specifications:

  • Type: NPN Darlington Transistor (Power Module)
  • Collector-Emitter Voltage (VCEO): 1200V
  • Collector Current (IC): 12A
  • Collector Power Dissipation (PC): 120W
  • DC Current Gain (hFE): 1000 (min)
  • Package Type: TO-3P (Isolated Package)
  • Operating Temperature Range: -40°C to +150°C

Descriptions:

  • Designed for high-voltage, high-current switching applications.
  • Features a built-in fast-recovery diode for improved efficiency in inductive load switching.
  • Suitable for motor control, inverters, and power supply circuits.

Features:

  • High Voltage Capability: Supports up to 1200V breakdown voltage.
  • High Current Handling: Capable of 12A continuous collector current.
  • Darlington Configuration: Provides high current gain for efficient switching.
  • Built-in Diode: Includes an integrated freewheeling diode for protection.
  • Isolated Package: TO-3P case ensures electrical isolation for heat sink mounting.

This transistor is optimized for industrial and power electronics applications requiring robust performance under high-voltage conditions.

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