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TLR327 Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
TLR327TOSHIBA15000Yes

TLR327** is a **TOSHIBA**-manufactured **phototransistor** designed for optical sensing applications.

The TLR327 is a TOSHIBA-manufactured phototransistor designed for optical sensing applications.

Specifications:

  • Type: NPN Silicon Phototransistor
  • Package: Through-hole (3-pin)
  • Wavelength Sensitivity Peak: 940 nm (infrared)
  • Collector-Emitter Voltage (VCEO): 30 V
  • Emitter-Collector Voltage (VECO): 5 V
  • Collector Current (IC): 20 mA (max)
  • Power Dissipation (Pd): 100 mW
  • Operating Temperature Range: -25°C to +85°C
  • Dark Current (ICEO): 100 nA (max)

Descriptions & Features:

  • High Sensitivity: Optimized for infrared light detection.
  • Fast Response Time: Suitable for pulse detection and optical switching.
  • Low Dark Current: Ensures reliable performance in low-light conditions.
  • Compact Design: Through-hole package for easy PCB mounting.
  • Applications: Optical encoders, light barriers, remote controls, and proximity sensors.

For exact performance characteristics, refer to the TOSHIBA datasheet for the TLR327.

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