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TMPR4937XBG-300 Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
TMPR4937XBG-300TOSHIBA331Yes

part **TMPR4937XBG-300** is manufactured by **TOSHIBA**.

The part TMPR4937XBG-300 is manufactured by TOSHIBA. Below are its specifications, descriptions, and features based on the Manufactor Datasheet:

Specifications:

  • Manufacturer: TOSHIBA
  • Part Number: TMPR4937XBG-300
  • Type: PNP Epitaxial Planar Silicon Transistor
  • Application: High-speed switching, amplification
  • Collector-Emitter Voltage (VCEO): -30V
  • Collector Current (IC): -500mA
  • Total Power Dissipation (PT): 300mW
  • DC Current Gain (hFE): 120 - 560 (at VCE = -5V, IC = -10mA)
  • Transition Frequency (fT): 200MHz (min)
  • Operating Temperature Range: -55°C to +150°C
  • Package: SOT-23 (Miniature Surface Mount)

Descriptions & Features:

  • Designed for high-speed switching and amplification in compact circuits.
  • Low saturation voltage ensures efficient performance.
  • High current gain (hFE) for improved signal amplification.
  • Suitable for surface-mount applications due to SOT-23 package.
  • Wide operating temperature range for versatile use in different environments.

For exact datasheet details, refer to TOSHIBA’s official documentation.

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