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133E 64740 Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
133E 64740TOSHIBA480Yes

TOSHIBA 133E 64740** is a semiconductor component, specifically a **Power MOSFET** designed for various electronic applications.

The TOSHIBA 133E 64740 is a semiconductor component, specifically a Power MOSFET designed for various electronic applications. Below are its key specifications, descriptions, and features:

Specifications:

  • Manufacturer: Toshiba
  • Part Number: 133E 64740
  • Type: N-Channel Power MOSFET
  • Voltage Rating (VDS): Typically rated for high-voltage applications (exact value depends on datasheet).
  • Current Rating (ID): Designed for high current handling (specific value to be confirmed from datasheet).
  • Package Type: TO-220 or similar power package (exact package may vary).
  • Gate Threshold Voltage (VGS(th)): Standard MOSFET gate drive voltage (e.g., 2V–4V).
  • On-Resistance (RDS(on)): Low on-resistance for efficient power switching.
  • Power Dissipation (PD): High power dissipation capability for robust performance.

Descriptions:

  • Designed for switching and amplification in power electronics.
  • Suitable for DC-DC converters, motor control, and power supply circuits.
  • Features fast switching speed and low conduction losses.

Features:

  • High voltage and current handling capability.
  • Low RDS(on) for reduced power loss.
  • Robust thermal performance due to efficient package design.
  • Avalanche energy rated for reliability in harsh conditions.

For exact values (voltage, current, etc.), refer to the official Toshiba datasheet for the 133E 64740 model.

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