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1SS319(TE85L,F) Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
1SS319(TE85L,F)TOSHIBA27000Yes

SS319(TE85L,F)** is a Schottky barrier diode manufactured by **Toshiba**.

The SS319(TE85L,F) is a Schottky barrier diode manufactured by Toshiba. Below are its key specifications, descriptions, and features:

Specifications:

  • Type: Schottky Barrier Diode
  • Maximum Reverse Voltage (VR): 40V
  • Average Rectified Forward Current (IO): 1A
  • Peak Forward Surge Current (IFSM): 30A (non-repetitive)
  • Forward Voltage (VF): 0.5V (typical at IF = 1A)
  • Reverse Current (IR): 0.5mA (maximum at VR = 40V)
  • Operating Temperature Range: -65°C to +125°C
  • Package: SOD-323 (Miniature Surface Mount)

Descriptions:

  • Designed for high-speed switching applications.
  • Low forward voltage drop for improved efficiency.
  • Suitable for power supply circuits, reverse polarity protection, and DC-DC converters.

Features:

  • Fast Switching: Minimizes switching losses.
  • Low Leakage Current: Ensures better performance in reverse bias.
  • Compact Package: SOD-323 for space-saving PCB designs.
  • High Surge Current Capability: Reliable under transient conditions.

This diode is commonly used in consumer electronics, automotive systems, and power management circuits. For exact performance characteristics, refer to Toshiba’s official datasheet.

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