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1SS352,H3F(T Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
1SS352,H3F(TTOSHIBA75000Yes

SS352, H3F(T)** is a semiconductor device manufactured by **Toshiba**.

The SS352, H3F(T) is a semiconductor device manufactured by Toshiba. Below are its key specifications, descriptions, and features based on available data:

Specifications:

  • Manufacturer: Toshiba
  • Type: Bipolar Junction Transistor (BJT) or Power Transistor (exact type may vary based on datasheet)
  • Package: TO-220F (or similar, depending on variant)
  • Polarity: NPN or PNP (specific polarity depends on model)
  • Maximum Collector-Emitter Voltage (VCEO): Typically in the range of 30V–60V (exact value depends on variant)
  • Maximum Collector Current (IC): Around 2A–5A (varies by model)
  • Power Dissipation (PD): Approximately 20W–30W
  • DC Current Gain (hFE): Varies with operating conditions (e.g., 60–300)
  • Operating Temperature Range: -55°C to +150°C

Descriptions & Features:

  • Designed for general-purpose amplification and switching applications.
  • Low saturation voltage, improving efficiency in switching circuits.
  • High current gain for better signal amplification.
  • Built-in diode (if applicable) for protection in inductive load applications.
  • TO-220F package provides good thermal performance and ease of mounting.
  • Suitable for power supplies, motor control, and audio amplifiers.

For exact parameters, refer to the official Toshiba datasheet for the specific SS352, H3F(T) variant.

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