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1SS396(TE85L,F) Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
1SS396(TE85L,F)Toshiba3000Yes

SS396(TE85L,F)** is a semiconductor device manufactured by **Toshiba**.

The SS396(TE85L,F) is a semiconductor device manufactured by Toshiba. Below are the factual specifications, descriptions, and features of the component:

Specifications:

  • Type: PNP Silicon Epitaxial Planar Transistor
  • Package: TO-92MOD (Miniature Molded Package)
  • Collector-Base Voltage (VCBO): -50V
  • Collector-Emitter Voltage (VCEO): -50V
  • Emitter-Base Voltage (VEBO): -5V
  • Collector Current (IC): -500mA
  • Total Power Dissipation (PT): 500mW
  • Junction Temperature (Tj): 150°C
  • Storage Temperature (Tstg): -55°C to +150°C

Descriptions:

  • Designed for general-purpose amplification and switching applications.
  • Suitable for low-power applications due to its moderate current and voltage ratings.
  • Features high reliability and stability in a compact TO-92MOD package.

Features:

  • Low Saturation Voltage: Ensures efficient switching performance.
  • High Current Gain (hFE): Provides good amplification characteristics.
  • Compact Size: Ideal for space-constrained PCB designs.
  • RoHS Compliant: Meets environmental standards.

This information is based on Toshiba's official datasheet for the SS396(TE85L,F). For detailed performance curves and application notes, refer to the manufacturer's documentation.

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