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2SA1162-Y,LXGF(T Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
2SA1162-Y,LXGF(TTOSHIBA3000Yes

2SA1162-Y,LXGF(T)** is a PNP bipolar junction transistor (BJT) manufactured by **TOSHIBA**.

The 2SA1162-Y,LXGF(T) is a PNP bipolar junction transistor (BJT) manufactured by TOSHIBA. Below are its key specifications, descriptions, and features:

Specifications:

  • Transistor Type: PNP
  • Collector-Base Voltage (VCBO): -50V
  • Collector-Emitter Voltage (VCEO): -50V
  • Emitter-Base Voltage (VEBO): -5V
  • Collector Current (IC): -1.5A
  • Collector Power Dissipation (PC): 1W
  • DC Current Gain (hFE): 120 to 400 (at VCE = -6V, IC = -150mA)
  • Transition Frequency (fT): 100MHz (Typical)
  • Operating Temperature Range: -55°C to +150°C
  • Package: SC-62 (SOT-89)

Descriptions:

  • Designed for general-purpose amplification and switching applications.
  • Suitable for low-voltage, high-speed switching circuits.
  • Compact SOT-89 package for space-saving PCB designs.

Features:

  • High current gain (hFE) for improved efficiency.
  • Low saturation voltage for better switching performance.
  • High transition frequency (fT) for fast response in amplification circuits.
  • Lead-free and RoHS compliant.

For detailed application notes and electrical characteristics, refer to the official TOSHIBA datasheet.

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