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2SA1298-Y(TE85L,F) Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
2SA1298-Y(TE85L,F)TOSHIBA3000Yes

2SA1298-Y(TE85L,F)** is a PNP bipolar junction transistor (BJT) manufactured by **TOSHIBA**.

The 2SA1298-Y(TE85L,F) is a PNP bipolar junction transistor (BJT) manufactured by TOSHIBA.

Specifications:

  • Transistor Type: PNP
  • Collector-Base Voltage (VCBO): -50V
  • Collector-Emitter Voltage (VCEO): -50V
  • Emitter-Base Voltage (VEBO): -5V
  • Collector Current (IC): -1A
  • Collector Dissipation (PC): 1W
  • DC Current Gain (hFE): 120 to 400 (at IC = -0.1A, VCE = -5V)
  • Transition Frequency (fT): 100MHz (min)
  • Operating Temperature Range: -55°C to +150°C
  • Package: SOT-89 (Mini Mold)

Descriptions & Features:

  • Designed for general-purpose amplification and switching applications.
  • High current gain (hFE) with low saturation voltage.
  • Suitable for low-noise and high-speed applications.
  • Compact SOT-89 package for space-saving PCB designs.
  • RoHS compliant.

This transistor is commonly used in audio amplifiers, signal processing circuits, and power management applications.

(Note: Always refer to the official TOSHIBA datasheet for precise electrical characteristics and application guidelines.)

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