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2SA965-Y Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
2SA965-YTOSHIBA133Yes

2SA965-Y** is a PNP bipolar junction transistor (BJT) manufactured by **TOSHIBA**.

The 2SA965-Y is a PNP bipolar junction transistor (BJT) manufactured by TOSHIBA. Below are its key specifications, descriptions, and features:

Specifications:

  • Transistor Type: PNP
  • Collector-Base Voltage (VCBO): -50V
  • Collector-Emitter Voltage (VCEO): -40V
  • Emitter-Base Voltage (VEBO): -5V
  • Collector Current (IC): -1.5A
  • Collector Dissipation (PC): 900mW
  • DC Current Gain (hFE): 60 ~ 320 (depending on conditions)
  • Transition Frequency (fT): 100MHz
  • Operating Temperature Range: -55°C to +150°C
  • Package: TO-92 (standard through-hole package)

Descriptions:

  • Designed for general-purpose amplification and switching applications.
  • Suitable for low to medium power circuits.
  • Commonly used in audio amplifiers, signal processing, and driver stages.

Features:

  • High current gain (hFE) range.
  • Low saturation voltage for efficient switching.
  • Compact TO-92 package for easy PCB mounting.
  • Reliable performance in a wide temperature range.

For exact performance characteristics, refer to TOSHIBA's official datasheet.

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