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2SC2712-GR(TE85L,F Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
2SC2712-GR(TE85L,FToshiba75000Yes

2SC2712-GR(TE85L,F)** is a bipolar junction transistor (BJT) manufactured by **Toshiba**.

The 2SC2712-GR(TE85L,F) is a bipolar junction transistor (BJT) manufactured by Toshiba. Below are its key specifications, descriptions, and features:

Specifications:

  • Transistor Type: NPN
  • Maximum Collector-Base Voltage (VCBO): 50V
  • Maximum Collector-Emitter Voltage (VCEO): 45V
  • Maximum Emitter-Base Voltage (VEBO): 5V
  • Collector Current (IC): 100mA
  • Power Dissipation (PC): 200mW
  • DC Current Gain (hFE): 120 to 820 (at VCE = 6V, IC = 1mA)
  • Transition Frequency (fT): 200MHz (typical)
  • Operating Temperature Range: -55°C to +150°C
  • Package: SOT-23 (Miniature Surface-Mount Package)

Descriptions:

  • Designed for high-frequency amplification and switching applications.
  • Suitable for low-noise, small-signal amplification in audio and RF circuits.
  • Compact SOT-23 package enables space-efficient PCB designs.

Features:

  • High current gain (hFE) for improved signal amplification.
  • Low saturation voltage for efficient switching.
  • High transition frequency (fT) for RF applications.
  • Surface-mount package for automated assembly.

This transistor is commonly used in audio amplifiers, RF circuits, and switching applications. For exact performance characteristics, refer to Toshiba’s official datasheet.

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