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2SC2881-Y(TE12L,ZC Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
2SC2881-Y(TE12L,ZCTOSHIBA10000Yes

2SC2881-Y(TE12L,ZC)** is a high-frequency NPN bipolar junction transistor (BJT) manufactured by **TOSHIBA**.

The 2SC2881-Y(TE12L,ZC) is a high-frequency NPN bipolar junction transistor (BJT) manufactured by TOSHIBA. Below are its specifications, descriptions, and features:

Specifications:

  • Transistor Type: NPN
  • Maximum Collector-Base Voltage (VCB): 15V
  • Maximum Collector-Emitter Voltage (VCE): 12V
  • Maximum Emitter-Base Voltage (VEB): 3V
  • Maximum Collector Current (IC): 30mA
  • Total Power Dissipation (Ptot): 100mW
  • Junction Temperature (Tj): 150°C
  • Transition Frequency (fT): 6000MHz (6GHz)
  • Noise Figure (NF): 1.5dB (typical at 1GHz)
  • Package: SOT-323 (SC-70)

Descriptions:

  • Designed for high-frequency amplification in RF applications.
  • Suitable for low-noise, high-gain circuits in wireless communication systems.
  • Compact SOT-323 package for space-constrained designs.

Features:

  • High fT (6GHz) for excellent RF performance.
  • Low noise figure (1.5dB typical) for improved signal clarity.
  • Small form factor (SOT-323) for compact PCB layouts.
  • Optimized for VHF/UHF applications, including mobile communication devices.

This transistor is commonly used in RF amplifiers, oscillators, and wireless communication circuits.

(Note: Always refer to the official TOSHIBA datasheet for detailed electrical characteristics and application guidelines.)

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