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The TOSHIBA 2SC3112-A is a high-frequency NPN bipolar junction transistor (BJT) designed for RF amplifier applications. Below are its key specifications, descriptions, and features based on manufacturer data:

Specifications:

• Transistor Type: NPN
• Maximum Collector-Base Voltage (V_CB): 30V
• Maximum Collector-Emitter Voltage (V_CE): 15V
• Maximum Emitter-Base Voltage (V_EB): 3V
• Maximum Collector Current (I_C): 50mA
• Total Power Dissipation (P_tot): 150mW
• Junction Temperature (T_j): 125°C
• Transition Frequency (f_T): 5GHz (typ.)
• Noise Figure (NF): 1.5dB (typ. at 1GHz)
• Gain (h_FE): 20–100 (at V_CE = 6V, I_C = 5mA)

Description:

The 2SC3112-A is optimized for high-frequency amplification in RF circuits, such as VHF/UHF applications, wireless communication systems, and low-noise amplifiers (LNAs). It features low noise and high gain, making it suitable for signal amplification in sensitive RF stages.

Features:

• High Transition Frequency (f_T): 5GHz ensures excellent high-frequency performance.
• Low Noise Figure (NF): 1.5dB (typ.) at 1GHz for improved signal clarity.
• Compact Package: Comes in a small SOT-323 (SC-70) surface-mount package for space-constrained designs.
• High Current Gain (h_FE): Provides efficient signal amplification.

This transistor is commonly used in RF front-end circuits, mobile communication devices, and other high-frequency applications.

(Note: Always refer to the official TOSHIBA datasheet for precise and updated specifications.)