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2SC5200N(S1,E,S) Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
2SC5200N(S1,E,S)TOSHIBA13944Yes

### **Part Number:** 2SC5200N(S1,E,S) **Manufacturer:** TOSHIBA ### **Specifications:** - **Transistor Type:** NPN Bipolar Junction Transistor (BJT) - **Collector-Emitter Voltage (VCEO):** 230V - **Collector-Base Voltage (VCBO):** 230V - **Em

Part Number: 2SC5200N(S1,E,S)

Manufacturer: TOSHIBA

Specifications:

  • Transistor Type: NPN Bipolar Junction Transistor (BJT)
  • Collector-Emitter Voltage (VCEO): 230V
  • Collector-Base Voltage (VCBO): 230V
  • Emitter-Base Voltage (VEBO): 5V
  • Collector Current (IC): 15A
  • Collector Dissipation (PC): 150W (at Tc=25°C)
  • DC Current Gain (hFE): 55 to 160 (at VCE=5V, IC=2A)
  • Transition Frequency (fT): 30MHz (min)
  • Operating Temperature Range: -55°C to +150°C
  • Package: TO-3P(N)

Descriptions:

The 2SC5200N is a high-power NPN transistor designed for audio amplifier and general-purpose switching applications. It features high current capability, high breakdown voltage, and excellent linearity, making it suitable for high-fidelity audio output stages.

Features:

  • High Power Dissipation: 150W
  • High Collector Current: 15A
  • Low Saturation Voltage: VCE(sat) = 0.5V (max) at IC=5A, IB=1A
  • Complementary PNP Pair: 2SA1943
  • High Reliability & Durability
  • Suitable for Audio Amplifiers & Switching Circuits

(End of specifications)

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