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2SC5785 Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
2SC5785TOSHIBA5000Yes

2SC5785** is a high-voltage NPN bipolar junction transistor (BJT) manufactured by **TOSHIBA**.

The 2SC5785 is a high-voltage NPN bipolar junction transistor (BJT) manufactured by TOSHIBA. Below are its key specifications, descriptions, and features:

Specifications:

  • Transistor Type: NPN
  • Collector-Base Voltage (VCBO): 1500V
  • Collector-Emitter Voltage (VCEO): 800V
  • Emitter-Base Voltage (VEBO): 7V
  • Collector Current (IC): 5A
  • Collector Dissipation (PC): 50W
  • DC Current Gain (hFE): 8 to 40 (at IC = 3A, VCE = 5V)
  • Transition Frequency (fT): 4MHz (typical)
  • Operating Temperature Range: -55°C to +150°C
  • Package Type: TO-3P

Descriptions:

  • Designed for high-voltage switching applications, such as power supplies and inverters.
  • Features low saturation voltage for improved efficiency.
  • Suitable for CRT displays, industrial equipment, and power regulation circuits.

Features:

  • High breakdown voltage (1500V VCBO)
  • High current capability (5A IC)
  • Low collector-emitter saturation voltage (VCE(sat) = 1.5V max at IC = 3A, IB = 0.6A)
  • High-speed switching performance
  • Robust TO-3P package for efficient heat dissipation

This transistor is optimized for high-voltage, high-power applications where reliability and efficiency are critical.

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