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4013B Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
4013BTOSHIBA132Yes

TOSHIBA 4013B** is a **PNP Bipolar Junction Transistor (BJT)**.

The TOSHIBA 4013B is a PNP Bipolar Junction Transistor (BJT). Below are its key specifications, descriptions, and features:

Specifications:

  • Transistor Type: PNP
  • Maximum Collector-Base Voltage (VCBO): -50V
  • Maximum Collector-Emitter Voltage (VCEO): -40V
  • Maximum Emitter-Base Voltage (VEBO): -5V
  • Collector Current (IC): -1.5A
  • Power Dissipation (PC): 1W
  • DC Current Gain (hFE): 60 to 320 (depending on operating conditions)
  • Operating Temperature Range: -55°C to +150°C
  • Package Type: TO-92 (plastic-encapsulated)

Descriptions:

  • Designed for general-purpose amplification and switching applications.
  • Suitable for low-power circuits.
  • Commonly used in audio amplifiers, signal processing, and driver stages.

Features:

  • High current gain (hFE) for efficient signal amplification.
  • Low saturation voltage, improving switching performance.
  • Compact TO-92 package, making it easy to integrate into circuits.
  • Reliable performance under specified operating conditions.

This transistor is widely used in electronic circuits where PNP functionality is required. Always refer to the datasheet for exact operating conditions and limitations.

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