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CUS551V30,H3F(T Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
CUS551V30,H3F(TTOSHIBA21000Yes

TOSHIBA CUS551V30,H3F(T)** is a semiconductor device with the following specifications, descriptions, and features: ### **Specifications:** - **Manufacturer:** Toshiba - **Part Number:** CUS551V30,H3F(T) - **Type:** IGBT (Insulated Gate Bipol

The TOSHIBA CUS551V30,H3F(T) is a semiconductor device with the following specifications, descriptions, and features:

Specifications:

  • Manufacturer: Toshiba
  • Part Number: CUS551V30,H3F(T)
  • Type: IGBT (Insulated Gate Bipolar Transistor) Module
  • Voltage Rating: 600V
  • Current Rating: 30A
  • Package Type: TO-3P(N)
  • Configuration: Single IGBT with built-in freewheeling diode
  • Operating Temperature Range: -40°C to +150°C

Descriptions:

  • Designed for high-efficiency switching applications.
  • Suitable for motor control, power supplies, and inverters.
  • Features low saturation voltage and fast switching speed.

Features:

  • Low VCE(sat): Ensures reduced power loss.
  • Fast Switching: Improves efficiency in high-frequency applications.
  • Built-in Diode: Includes a freewheeling diode for protection.
  • High Reliability: Robust construction for industrial use.
  • Isolated Base Plate: Enhances thermal performance.

This IGBT module is commonly used in power electronics applications requiring efficient switching and thermal management.

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