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DF2S6.2ASL,L3F(T Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
DF2S6.2ASL,L3F(TTOSHIBA100000Yes

Part Number:** DF2S6.

Part Number: DF2S6.2ASL, L3F(T)

Manufacturer: TOSHIBA

Specifications:

  • Type: Schottky Barrier Diode (SBD)
  • Configuration: Dual Common Cathode
  • Maximum Repetitive Reverse Voltage (VRRM): 60V
  • Average Forward Current (IO): 2A per diode (1A per leg)
  • Peak Forward Surge Current (IFSM): 30A
  • Forward Voltage (VF): 0.55V (typical) at 1A
  • Reverse Leakage Current (IR): 0.5mA (max) at 60V
  • Operating Temperature Range: -55°C to +150°C
  • Package: SOD-323FL (Miniature Surface Mount)

Descriptions:

The DF2S6.2ASL, L3F(T) is a high-efficiency Schottky barrier diode designed for low-voltage, high-speed switching applications. It features a dual common cathode configuration, making it suitable for compact circuit designs. The low forward voltage and fast switching characteristics enhance power efficiency in applications such as power supplies, DC-DC converters, and reverse current protection.

Features:

  • Low Forward Voltage: Minimizes power loss.
  • High-Speed Switching: Ideal for high-frequency circuits.
  • Compact Package: SOD-323FL for space-saving PCB designs.
  • High Surge Current Capability: Robust performance under transient conditions.
  • Lead-Free & RoHS Compliant: Environmentally friendly.

For detailed application notes, refer to Toshiba’s official datasheet.

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