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HN1B04FU-Y(TE85L,F Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
HN1B04FU-Y(TE85L,FTOSHIBA3000Yes

Manufacturer:** TOSHIBA **Part Number:** HN1B04FU-Y(TE85L,F) ### **Specifications:** - **Type:** Dual N-Channel MOSFET - **Configuration:** Common Drain - **Voltage Rating (VDS):** 20V - **Current Rating (ID):** 6A (per channel) - **On-R

Manufacturer: TOSHIBA

Part Number: HN1B04FU-Y(TE85L,F)

Specifications:

  • Type: Dual N-Channel MOSFET
  • Configuration: Common Drain
  • Voltage Rating (VDS): 20V
  • Current Rating (ID): 6A (per channel)
  • On-Resistance (RDS(on)): 25mΩ (max) at VGS = 4.5V
  • Gate Threshold Voltage (VGS(th)): 0.4V (min) – 1.0V (max)
  • Power Dissipation (PD): 1.5W (per channel)
  • Package: SSOP6 (Super Small Outline Package)
  • Operating Temperature Range: -55°C to +150°C

Descriptions:

The HN1B04FU-Y(TE85L,F) is a dual N-channel MOSFET designed for low-voltage, high-efficiency switching applications. It features a common-drain configuration, making it suitable for power management in portable devices, battery protection circuits, and load switching.

Features:

  • Low on-resistance for reduced power loss
  • Fast switching performance
  • Compact SSOP6 package for space-saving designs
  • Suitable for battery-powered applications
  • Lead-free and RoHS compliant

For detailed application notes and reliability data, refer to the official TOSHIBA datasheet.

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