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SSM3K7002BFU,LSF(T Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
SSM3K7002BFU,LSF(TTOSHIBA3000Yes

SSM3K7002BFU,LSF(T)** is a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by **TOSHIBA**.

The SSM3K7002BFU,LSF(T) is a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by TOSHIBA. Below are the factual specifications, descriptions, and features of the component:

Specifications:

  • Type: N-Channel MOSFET
  • Drain-Source Voltage (VDSS): 30V
  • Gate-Source Voltage (VGS): ±20V
  • Drain Current (ID): 5A (continuous)
  • Power Dissipation (PD): 1W
  • On-Resistance (RDS(ON)):
  • 35mΩ (max) @ VGS = 10V
  • 45mΩ (max) @ VGS = 4.5V
  • Threshold Voltage (VGS(th)): 0.4V (min) – 1.5V (max)
  • Input Capacitance (Ciss): 500pF (typical)
  • Output Capacitance (Coss): 130pF (typical)
  • Reverse Transfer Capacitance (Crss): 40pF (typical)
  • Turn-On Delay Time (td(on)): 10ns (typical)
  • Turn-Off Delay Time (td(off)): 30ns (typical)
  • Operating Temperature Range: -55°C to +150°C

Package:

  • Package Type: SSM (Super Small Mold)
  • Pin Configuration: 3-pin (SOT-23 equivalent)

Descriptions & Features:

  • Low On-Resistance: Designed for high-efficiency switching applications.
  • Fast Switching Speed: Suitable for high-frequency applications.
  • Compact Package: SSM package allows for space-saving designs.
  • Low Threshold Voltage: Enables operation with low gate drive voltage.
  • Applications:
  • Power management circuits
  • Load switching
  • DC-DC converters
  • Battery protection circuits

This MOSFET is optimized for low-voltage, high-efficiency power switching applications in portable and compact electronic devices.

(Note: Always refer to the official TOSHIBA datasheet for the most accurate and detailed specifications.)

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