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The SSM3K7002BFU,LSF(T) is a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by TOSHIBA. Below are the factual specifications, descriptions, and features of the component:

Specifications:

• Type: N-Channel MOSFET
• Drain-Source Voltage (V_DSS): 30V
• Gate-Source Voltage (V_GS): ±20V
• Drain Current (I_D): 5A (continuous)
• Power Dissipation (P_D): 1W
• On-Resistance (R_DS(ON)):
• 35mΩ (max) @ V_GS = 10V
• 45mΩ (max) @ V_GS = 4.5V
• Threshold Voltage (V_GS(th)): 0.4V (min) – 1.5V (max)
• Input Capacitance (C_iss): 500pF (typical)
• Output Capacitance (C_oss): 130pF (typical)
• Reverse Transfer Capacitance (C_rss): 40pF (typical)
• Turn-On Delay Time (t_d(on)): 10ns (typical)
• Turn-Off Delay Time (t_d(off)): 30ns (typical)
• Operating Temperature Range: -55°C to +150°C

Package:

• Package Type: SSM (Super Small Mold)
• Pin Configuration: 3-pin (SOT-23 equivalent)

Descriptions & Features:

• Low On-Resistance: Designed for high-efficiency switching applications.
• Fast Switching Speed: Suitable for high-frequency applications.
• Compact Package: SSM package allows for space-saving designs.
• Low Threshold Voltage: Enables operation with low gate drive voltage.
• Applications:
• Power management circuits
• Load switching
• DC-DC converters
• Battery protection circuits

This MOSFET is optimized for low-voltage, high-efficiency power switching applications in portable and compact electronic devices.

(Note: Always refer to the official TOSHIBA datasheet for the most accurate and detailed specifications.)